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Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
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10.1063/1.3081059
/content/aip/journal/apl/94/6/10.1063/1.3081059
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3081059
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Device structure of the standard LED. The extra layers are inserted to form the first test structure. The second test structure differs only in that the composition of the electron blocking layers is . Layers with no doping listed were unintentionally doped.

Image of FIG. 2.
FIG. 2.

(a) Normalized flux spectra at of the standard LED (1), the first test structure (2) and the second test structure (3). No short-wavelength peak is observed. (b) Normalized flux spectra of the same structures at . A fit to the short-wavelength bandtail of the major peak is shown. The short-wavelength peak originating from the extra quantum well is observed in the spectra of both test structures.

Image of FIG. 3.
FIG. 3.

(a) Normalized flux as a function of current density for the standard LED, filled diamonds; first test structure, filled squares; and second test structure, filled triangles. Also shown is the flux originating from the extra quantum wells in the test structures, open marks, scaled to appear 60 times larger. (b) EQE as a function of current density for the same structures. Vertical lines indicate the onset of electron overflow and efficiency droop.

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/content/aip/journal/apl/94/6/10.1063/1.3081059
2009-02-12
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3081059
10.1063/1.3081059
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