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Electrical properties of epitaxial tunnel barriers on (001) substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

High-resolution x-ray diffraction scans of a 13 nm thick Pt on before and after growth of a 4.5 nm thin film. Note the thickness oscillations around the 002 peak of Pt. Additional peaks (not labeled) are artifacts from the diffractometer.

Image of FIG. 2.
FIG. 2.

Atomic force microscopy images showing the surfaces of (a) 13 nm Pt on a (001) and (b) after growth of a 4.5 nm thin film. The scan area is . Scanning electron microscopy images of the same surfaces are shown in (c) and (d), respectively. (e) Cross-sectional HAADF image of the sample with the barrier recorded along . The Pt film appears very bright because of the strong atomic number sensitivity of the technique.

Image of FIG. 3.
FIG. 3.

(a) Current-voltage characteristics (double-sweep) of tunnel junction devices for three different maximum bias voltages (±0.3, ±0.5, and ±0.8 V). The data points for the two sweep directions overlap for the lower bias sweeps. The sweep direction (arrows) and sequence (numbers) are indicated. The inset shows the results for multiple, subsequent ±0.8 V sweeps. (b) Logarithmic derivative, , as a function of voltage for the ±0.8 V sweeps. Vertical arrows indicate tunneling anomalies.

Image of FIG. 4.
FIG. 4.

Tunnel currents as a function of time under positive and negative bias (±0.2, ±0.4, and ±0.8 V).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of epitaxial SrTiO3 tunnel barriers on (001) Pt/SrTiO3 substrates