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High-resolution x-ray diffraction scans of a 13 nm thick Pt on before and after growth of a 4.5 nm thin film. Note the thickness oscillations around the 002 peak of Pt. Additional peaks (not labeled) are artifacts from the diffractometer.
Atomic force microscopy images showing the surfaces of (a) 13 nm Pt on a (001) and (b) after growth of a 4.5 nm thin film. The scan area is . Scanning electron microscopy images of the same surfaces are shown in (c) and (d), respectively. (e) Cross-sectional HAADF image of the sample with the barrier recorded along . The Pt film appears very bright because of the strong atomic number sensitivity of the technique.
(a) Current-voltage characteristics (double-sweep) of tunnel junction devices for three different maximum bias voltages (±0.3, ±0.5, and ±0.8 V). The data points for the two sweep directions overlap for the lower bias sweeps. The sweep direction (arrows) and sequence (numbers) are indicated. The inset shows the results for multiple, subsequent ±0.8 V sweeps. (b) Logarithmic derivative, , as a function of voltage for the ±0.8 V sweeps. Vertical arrows indicate tunneling anomalies.
Tunnel currents as a function of time under positive and negative bias (±0.2, ±0.4, and ±0.8 V).
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