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Energy level alignment at a charge generation interface between -bis(-phenyl-1-naphthylamino)biphenyl and 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile
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/content/aip/journal/apl/94/6/10.1063/1.3081409
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Figures

Image of FIG. 1.

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FIG. 1.

The chemical structures of HAT-CN and NPB.

Image of FIG. 2.

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FIG. 2.

Evolution of the valence band spectra for HAT-CN/Au with increasing thickness. The inset shows the work function change as measured by the change in secondary electron cutoff position.

Image of FIG. 3.

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FIG. 3.

The valence band UPS data for thing NPB on 20 nm HAT-CN. The HOMO onset position of the HAT-CN is clearly observed at 3.8 eV, while that of NPB is at 0.3 eV. Thicker NPB layer exhibited charging behavior.

Image of FIG. 4.

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FIG. 4.

Energy level diagram at the NPB/HAT-CN/Au interface. The optical band gap of HAT-CN is less than 3.8 eV, although the transport LUMO level may not be below the Fermi level.

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/content/aip/journal/apl/94/6/10.1063/1.3081409
2009-02-12
2014-04-21

Abstract

We have determined the electronic energy level alignment at the interface between -bis( -phenyl-1-naphthylamino)biphenyl (NPB) and 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) using ultraviolet photoelectron spectroscopy. The highest occupied molecular orbital (HOMO) of 20 nm thick HAT-CN film was located at 3.8 eV below the Fermi level. Thus the lowest unoccupied molecular orbital (LUMO) is very close to the Fermi level. The HOMO position of NPB was only about 0.3 eV below Fermi level at NPB/HAT-CN interface. This enables an easy excitation of electrons from the NPB HOMO to the HAT-CN LUMO, creating electron-hole pairs across this organic-organic interface.

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Scitation: Energy level alignment at a charge generation interface between 4,4′-bis(N-phenyl-1-naphthylamino)biphenyl and 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3081409
10.1063/1.3081409
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