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Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices
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View: Figures


Image of FIG. 1.
FIG. 1.

Variation in short circuit current as a function of incident power intensity for two different wavelengths (488 nm, empty square dots, and 633 nm, empty circles). 633 nm short circuit current through SRO is reported for comparison (filled circles). Inset: schematic cross section of the device.

Image of FIG. 2.
FIG. 2.

Spectral response of devices having SRON active layers.

Image of FIG. 3.
FIG. 3.

Schematic energy diagram of the active layer under short circuit bias. (a) Primary photoexcitation process where an e-h pair is generated and where the photoexcited electron either (1) contributes to the short circuit current or (2) recombines or (3) is trapped. (b) Secondary photoexcitation process where a photogenerated electron detraps a sub-bandgap electron and both contribute to the short circuit current.

Image of FIG. 4.
FIG. 4.

(a) Photocurrent vs applied bias measured under 7 mW, 633 nm illumination (empty circles) and under both 7 mW, 633 nm and 3 mW IR illumination (filled circles). (b) Photocurrent enhancement caused by IR illumination and visible illumination (dashed line) and photocurrent under solely IR illumination (square dots) vs applied bias.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices