1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from at and from at due to segregation of Ge
Rent:
Rent this article for
USD
10.1063/1.3082092
/content/aip/journal/apl/94/6/10.1063/1.3082092
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3082092
/content/aip/journal/apl/94/6/10.1063/1.3082092
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/94/6/10.1063/1.3082092
2009-02-13
2014-07-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500 °C and from Si3H8 at 350 °C due to segregation of Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3082092
10.1063/1.3082092
SEARCH_EXPAND_ITEM