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Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from at and from at due to segregation of Ge
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10.1063/1.3082092
/content/aip/journal/apl/94/6/10.1063/1.3082092
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3082092
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The schematic diagram of the experiment (a). The sample structure (b).

Image of FIG. 2.
FIG. 2.

The SHG intensity as function of the angle of the incoming polarization, on one hand along from samples grown at (a) and at (b) and on the other hand along for samples grown at (c) and at (d).

Image of FIG. 3.
FIG. 3.

The SHG intensity as function of the thickness of deposited Si in monolayers, in the polarizer-analyzer combination (a) and in the polarizer-analyzer combination (b).

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/content/aip/journal/apl/94/6/10.1063/1.3082092
2009-02-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500 °C and from Si3H8 at 350 °C due to segregation of Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/6/10.1063/1.3082092
10.1063/1.3082092
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