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CIP-GMR and CPP-GMR curves of the SSV unpatterned thin film and 100 nm and 150 nm diameter device pillars. Inset: CPP-GMR major and minor loop curves for a 100 nm diameter -DSV.
Variation in critical current densities for STS as a function of current pulse width for SSV and -DSV devices.
STS curves of a 100 nm diameter perpendicular anisotropy -DSV (, 100 ns current pulses, and 600 Oe perpendicular bias field). A schematic of the magnetization configuration at each resistance level is shown (AP for antiparallel, P1 and P2 for the two possible parallel configurations) with the small tilt of the in-plane polarizer a result of the perpendicular bias field.
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