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Erratum: “High-performance nanowire field effect transistors” [Appl. Phys. Lett.89, 133113 (2006)]
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FIG. 3.

(b) I DSV DS characteristics of a ZnO nanowire measured across subsequent electrode pairs.

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2009-02-19
2014-04-16

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erratum: “High-performance ZnO nanowire field effect transistors” [Appl. Phys. Lett.89, 133113 (2006)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/7/10.1063/1.2948901
10.1063/1.2948901
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