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Electrode kinetics of -based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
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10.1063/1.3077310
/content/aip/journal/apl/94/7/10.1063/1.3077310
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/7/10.1063/1.3077310
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage characteristic of a electrochemical metallization cell using a triangular voltage sweep. The insets show the different stages of the switching procedure. The ON conductance is limited by a compliance current of .

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics of a electrochemical metallization cell. (a) First (forming) and subsequent switching cycles measured at a sweep rate of on a cell. ( thickness , Cu electrode diameter ). (b) Oxide film thickness dependence of the SET voltage for the forming, , and subsequent switching cycles, .

Image of FIG. 3.
FIG. 3.

Switching voltage vs sweep rate measured on a cell ( thickness , Ir electrode diameter ). For medium to high sweep rate , a clear exponential relationship between the switching voltage and the sweep rate is observed while for low -values a critical SET voltage is approached.

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/content/aip/journal/apl/94/7/10.1063/1.3077310
2009-02-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/7/10.1063/1.3077310
10.1063/1.3077310
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