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In situ x-ray photoelectron spectroscopy analysis of passivation layer obtained in a cryoetching process
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10.1063/1.3085957
/content/aip/journal/apl/94/7/10.1063/1.3085957
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/7/10.1063/1.3085957
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

In situ XPS spectra of Si sample after an overpassivating plasma from to ambient temperature.

Image of FIG. 2.
FIG. 2.

Evidence of adsorbed groups at the top surface of the sample at thanks to the deconvolution of C and F spectra.

Image of FIG. 3.
FIG. 3.

XPS atomic quantification vs sample temperature of fluorine (F), oxygen (O), carbon (c), silicon of the “passivation layer” (PL) compound (Si PL), and silicon coming from the substrate .

Image of FIG. 4.
FIG. 4.

Evolution of Si peak shape during the sample warm-up. (a) , (b) , (c) , and (d) .

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/content/aip/journal/apl/94/7/10.1063/1.3085957
2009-02-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/7/10.1063/1.3085957
10.1063/1.3085957
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