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In situ XPS spectra of Si sample after an overpassivating plasma from to ambient temperature.
Evidence of adsorbed groups at the top surface of the sample at thanks to the deconvolution of C and F spectra.
XPS atomic quantification vs sample temperature of fluorine (F), oxygen (O), carbon (c), silicon of the “passivation layer” (PL) compound (Si PL), and silicon coming from the substrate .
Evolution of Si peak shape during the sample warm-up. (a) , (b) , (c) , and (d) .
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