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Tuning of threshold voltage of organic field-effect transistors by space charge polarization
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/content/aip/journal/apl/94/7/10.1063/1.3086277
2009-02-18
2014-11-28

Abstract

We demonstrate a tunable threshold voltage in an organic field-effect transistor(OFET) using an ion-dispersed gate dielectric. By applying an external electric field to the gate dielectrics, the dispersed ions in the gate dielectric are separated by electrophoresis and form space charge polarization. The drain current of the OFET increases more than 1.9 times, and the threshold voltage decreases by 22 V (from −35.1 to −13.1 V). The direction and the magnitude of shift are tunable with the applied . The origin of the shift is attributed to the polarization of the gate dielectric.

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Scitation: Tuning of threshold voltage of organic field-effect transistors by space charge polarization
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/7/10.1063/1.3086277
10.1063/1.3086277
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