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Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping
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10.1063/1.3086298
/content/aip/journal/apl/94/7/10.1063/1.3086298
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/7/10.1063/1.3086298
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Figures

Image of FIG. 1.
FIG. 1.

Schematic of the grown structures: (a) sample 1 without Be doping; (b) sample 2 with Be-doped QDs; (c) sample 3 with 3 nm thick Be-doped GaAs layers placed 15 nm away from the QDs; (d) sample 4 with 3 nm thick Be-doped layers placed 40 nm away from the QDs; (e) sample 5 with a 3 nm thick Be-doped GaAs layer placed 15 nm above the QDs; (f) sample 6 with a 3 nm thick Be-doped GaAs layer placed 15 nm below the QDs. Doping concentration was about .

Image of FIG. 2.
FIG. 2.

Integrated PL intensities for transitions from the ground states as annealing time was varied. Annealing temperature was at . The insets show experimental and fitted spectra for the as-grown samples.

Image of FIG. 3.
FIG. 3.

PL features determined from the fitted PL spectra: (a) BSs of PL, (b) energy separation as a function of the ground state energy , and (c) FWHM of as a function of its energy.

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/content/aip/journal/apl/94/7/10.1063/1.3086298
2009-02-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/7/10.1063/1.3086298
10.1063/1.3086298
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