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Schematic representation of the fabrication process for growing and localizing NWs on top of IDEs structures.
SEM micrographs of Pt NW-templated micro-IDEs. The widths of electrodes and interspaces are in the range. The diameter of the NWs is about 90 nm and their length is . The distance between two adjacent NWs is around 150 nm. The images were taken with increased magnification from (a) to (d) after the AAO removal. [(e) and (f)] Top view SEM micrographs of Pt NWs before (e) and after (f) PANI polymerization.
A transversal sketch through the HAS sensor with its electrical equivalent circuit. and are the parasite capacitive and resistive components of the substrate. and are the components of the PANI layer, and is the electrical double-layer capacity formed on the PANI surface. is the resistive component of the buffer.
(a) Frequency response of the LAS sensor in two conditions: and . (b) Frequency response of the HAS sensor in two conditions: and . (c) Total capacity vs for two HAS sensors with different PANI thicknesses. (d) Comparison between sensitivities for LAS and HAS sensors.
Summary of the sensitivity experimental data (LAS: low active surface sensor; HAS: high active surface sensor). The thickness of the PANI functional layer is indicated in brackets.
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