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Mn-doped amorphous Si:H films with anomalous Hall effect up to 150 K
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10.1063/1.3089247
/content/aip/journal/apl/94/7/10.1063/1.3089247
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/7/10.1063/1.3089247

Figures

Image of FIG. 1.
FIG. 1.

High-resolution TEM image of an sample. The inset shows the corresponding selected-area electron diffraction pattern.

Image of FIG. 2.
FIG. 2.

(a) curves measured at 10 K of films with and without hydrogen. (b) Magnetization vs temperature curves of sample with and without hydrogen, ZFC, or FC under a magnetic field 0.01 T. The fitting results of FC data are shown by the solid and dashed lines in hydrogenated and unhydrogenated samples, respectively.

Image of FIG. 3.
FIG. 3.

Carrier concentration vs Mn content of films with and without hydrogen.

Image of FIG. 4.
FIG. 4.

(a) The whole Hall resistance vs field of an sample measured at 150 K. (b) Collective Hall resistance vs field curves of an sample measured at 50, 100, and 150 K, respectively.

Tables

Generic image for table
Table I.

Carrier concentration and conductivity of hydrogenated (, 0.105) films and unhydrogenated .

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/content/aip/journal/apl/94/7/10.1063/1.3089247
2009-02-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mn-doped amorphous Si:H films with anomalous Hall effect up to 150 K
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/7/10.1063/1.3089247
10.1063/1.3089247
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