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Field enhancement effect of nanocrystals in bandgap engineering of tunnel oxide for nonvolatile memory application
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10.1063/1.3077614
/content/aip/journal/apl/94/8/10.1063/1.3077614
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/8/10.1063/1.3077614
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional HRTEM images of the fabricated MOS structures with Au nanocrystals and AHA triply stacked tunnel oxides in (a) 1 nm/2 nm/3 nm [S123], (b) 2 nm/2 nm/2 nm [S222], and (c) 3 nm/2 nm/1 nm [S321] piling up sequences. The total thickness of each tunnel oxide is fixed at 6 nm.

Image of FIG. 2.
FIG. 2.

[(a)–(c)] High frequency (1 MHz) characteristics of samples S123, S222, and S321, respectively, in various ranges of the swept gate voltage. Negligible flatband voltage shift of the reference samples at ±10 V gate voltages is shown in the insets (-●-: with Au nanocrystal, -◼-: without Au nanocrystal). (d) Relations between flatband voltage shift and gate voltage for samples S123, S222, and S321. The inset shows the stored electron density (, vertical axis) against gate voltage (V, horizontal axis) in each measured MOS capacitor.

Image of FIG. 3.
FIG. 3.

Comparisons of hole injection efficiency of samples S123, S222, and S321 by applying different negative gate voltages in pulse time and measuring relative flatband voltage shifts.

Image of FIG. 4.
FIG. 4.

Simulated distributions of local enhancement of electric field Induced around a Au nanocrystal for samples S123, S222, and S321.

Image of FIG. 5.
FIG. 5.

Charge retention characteristics of samples S123, S222, and S321 under 10 V/10 s and −10 V/10 s gate voltage.

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/content/aip/journal/apl/94/8/10.1063/1.3077614
2009-02-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Field enhancement effect of nanocrystals in bandgap engineering of tunnel oxide for nonvolatile memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/8/10.1063/1.3077614
10.1063/1.3077614
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