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Crystal structures of (a) , (b) , and (c) .
XRD patterns in logarithmic scales of (a) thin film grown on substrate, (b) thin film obtained from a thin film by a 30 min reduction with , and (c) epitaxial thin film obtained from a thin film by 2 h reduction with . Diffraction peaks of the samples were indexed with the simple perovskite structure.
RSMs around (103) Bragg reflection of (a) perovskite thin film grown on substrate and (b) infinite-layer-structure epitaxial thin film.
XAS near the edge of and thin films.
XRD patterns in logarithmic scales of thin film grown on substrate (bottom), reduced thin film (middle), and reoxidized thin film (top). The inset shows the RSM around the (103) Bragg reflection for the reoxidized thin film.
Temperature dependence of resistivity (measured along the in-plane direction) of thin film grown on substrate, , , and reoxidized thin films.
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