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ErAs epitaxial Ohmic contacts to InGaAs/InP
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10.1063/1.3087313
/content/aip/journal/apl/94/8/10.1063/1.3087313
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/8/10.1063/1.3087313
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured resistance vs contact separation for the ErAs/InAs/InGaAs contact (TLM E1). Contact width is . The inset magnifies the range from 0.6 to . The sheet resistance and contact resistance are calculated from the slope and -intercept of the line fit.

Image of FIG. 2.
FIG. 2.

Specific contact resistivity of TLM E2 as a function of the lithographic width of the contact. Inset (a) shows the top view schematic of a typical TLM structure. Inset (b) shows TEM of 20 nm Mo on InGaAs.

Image of FIG. 3.
FIG. 3.

Specific contact resistivity of TLM E1 as a function of the anneal temperature, for a duration of 1 min, in a flowing ambient. The inset shows a cross-section schematic of the TLM structure.

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/content/aip/journal/apl/94/8/10.1063/1.3087313
2009-02-26
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ErAs epitaxial Ohmic contacts to InGaAs/InP
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/8/10.1063/1.3087313
10.1063/1.3087313
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