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Conduction band diagram of I-QCL under a positive bias corresponding to an applied voltage of 91 kV/cm. Two successive active regions are shown and the black thick arrow indicates the lasing transition at 184 meV.
Experimental and simulated x-ray diffraction curve of a 60-period strain-compensated I-QCL structure.
Pulsed light output power-current characteristics of a 2.1 mm long and wide episide up I-QCL device in the 77–300 K range. The current voltage curve at 300 K is plotted together. The inset shows emission spectrum at 77 K where lasing peak wavelength is .
(a) Time-resolved step scan picture showing thermal shift in wavelength due to rise in core temperature for QCL with injector. The inserted white arrow indicates the direction of shift in lasing wavelength. (b) Comparison of the rise in core temperature of conventional QCL and I-QCL at room temperature.
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