1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
Rent:
Rent this article for
USD
10.1063/1.3089687
/content/aip/journal/apl/94/8/10.1063/1.3089687
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/8/10.1063/1.3089687
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Left: semilogarithmic plot of the characteristics of GaInN/GaN LEDs; Right: diode-ideality factor vs current for the LEDs. Ten data points around the minimum value are used to determine the average value and its standard deviation.

Image of FIG. 2.
FIG. 2.

Calculated and simulated diode-ideality factors of GaInN/GaN LEDs as a function of the number of doped QBs. Measured structures have one to four QBs and simulated structures have zero to four QBs.

Image of FIG. 3.
FIG. 3.

(a) Band profiles of GaInN/GaN LEDs for the different numbers of doped QBs. (b) Simulated band diagram of GaInN/GaN LEDs with all-QB-doped and zero-QB-doped under 3 V forward bias.

Image of FIG. 4.
FIG. 4.

Correlation between diode-ideality factor and forward voltage of GaInN/GaN LEDs for the different numbers of doped QBs.

Loading

Article metrics loading...

/content/aip/journal/apl/94/8/10.1063/1.3089687
2009-02-25
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/8/10.1063/1.3089687
10.1063/1.3089687
SEARCH_EXPAND_ITEM