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Left: semilogarithmic plot of the characteristics of GaInN/GaN LEDs; Right: diode-ideality factor vs current for the LEDs. Ten data points around the minimum value are used to determine the average value and its standard deviation.
Calculated and simulated diode-ideality factors of GaInN/GaN LEDs as a function of the number of doped QBs. Measured structures have one to four QBs and simulated structures have zero to four QBs.
(a) Band profiles of GaInN/GaN LEDs for the different numbers of doped QBs. (b) Simulated band diagram of GaInN/GaN LEDs with all-QB-doped and zero-QB-doped under 3 V forward bias.
Correlation between diode-ideality factor and forward voltage of GaInN/GaN LEDs for the different numbers of doped QBs.
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