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Optical properties of GaSb/GaAs type-ІІ quantum dots grown by droplet epitaxy
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10.1063/1.3090033
/content/aip/journal/apl/94/8/10.1063/1.3090033
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/8/10.1063/1.3090033
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectrum of GaSb/GaAs QDs at , .

Image of FIG. 2.
FIG. 2.

Excitation power dependences of PL peak energies for GaSb QDs and WL1.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependence of PL peak energy for GaSb QDs. The temperature dependences of GaAs and GaSb band gap, shifted in energy, are also shown as solid and dotted lines. (b) PL peak energy dependence on the integral PL intensity .

Image of FIG. 4.
FIG. 4.

(a) Arrhenius plot of integrated PL intensities for GaSb QDs and WL1. (b) Schematic representation of the rate equation model.

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/content/aip/journal/apl/94/8/10.1063/1.3090033
2009-02-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical properties of GaSb/GaAs type-ІІ quantum dots grown by droplet epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/8/10.1063/1.3090033
10.1063/1.3090033
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