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Terahertz pulse amplitude dependences on the photon energy measured on (100) (squares) and (111) (triangles) crystallographic planes of GaAs. Electron excess energies corresponding to the onset of electron transitions to and valleys are indicated by arrows.
Azimuthal angle dependence of the terahertz pulse amplitude radiated from (111) surface of GaAs illuminated by the 710-nm wavelength laser pulses at the irradiance of .
Terahertz excitation spectrum measured on (full points) and (empty points) epitaxial layers.
Energy positions of , , and valleys in , vs composition parameter . Points represent the experiment. Dashed lines are taken from Ref. 15.
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