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In-plane anisotropic photoluminescence of -plane GaN under asymmetric biaxial strain
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10.1063/1.3157132
/content/aip/journal/apl/95/1/10.1063/1.3157132
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3157132
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Geometry of the uniaxial strain experiment. (b) Definition of the coordinates.

Image of FIG. 2.
FIG. 2.

Calculated details of the three transitions of -plane GaN as a function of anisotropic strain. (a) Transition energy. (b) Relative oscillator strength components.

Image of FIG. 3.
FIG. 3.

(a) Calculated room temperature PL spectrums in particular directions under anisotropic strain. (b) Observed room temperature PL spectrums in particular directions under the same anisotropic strain.

Image of FIG. 4.
FIG. 4.

(a) Energy for PL peaks in and -transitions as a function of strain anisotropy. (b) Ratio of and -transitions integral intensity as a function of strain anisotropy.

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/content/aip/journal/apl/95/1/10.1063/1.3157132
2009-07-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In-plane anisotropic photoluminescence of C-plane GaN under asymmetric biaxial strain
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3157132
10.1063/1.3157132
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