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Solution-processed InGaZnO-based thin film transistors for printed electronics applications
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10.1063/1.3157265
/content/aip/journal/apl/95/1/10.1063/1.3157265
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3157265
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) TG and DTA curves of IGZO sol (TG: red, DTA: blue). (b) XRD pattern of a 50 nm thick IGZO film on a Si substrate covered with a 100 nm thick layer and SEM images of the film surfaces of (c) sol-gel ZnO and (d) sol-gel IGZO.

Image of FIG. 2.
FIG. 2.

A bright-field STEM image of an (a) IGZO film and chemical composition maps for (b) In, (c) Ga, and (d) Zn.

Image of FIG. 3.
FIG. 3.

Device performance for IGZO films with various Ga ratios. (a) Transfer curves ( at a fixed drain voltage of 10 V) for TFTs with IGZO active layers with the Ga ratio ranging from 0.1 to 1. (b) Output curve for the IGZO film with the 0.5 Ga ratio.

Image of FIG. 4.
FIG. 4.

Device performance for TFT with an IGZO active layer sintered at : (a) transfer curve and (b) output curve . The Ga ratio for this sample was 0.5.

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/content/aip/journal/apl/95/1/10.1063/1.3157265
2009-07-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Solution-processed InGaZnO-based thin film transistors for printed electronics applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3157265
10.1063/1.3157265
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