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Cross-sectional structure of bottom gate TFTs on PI/glass after debonding from glass substrate.
(a) Representative transfer characteristics of TFTs on glass substrate (open symbols) and PI substrate (solid symbols). (b) Threshold voltage shift as a function of stress time for TFTs on glass substrate (open symbols) and PI substrate (solid symbols).
Evolution TFT of ON current (squares), OFF current (circles) and gate leakage current (triangles) with bending curvature. Left and right panels correspond to inward and outward bending, respectively. Substrate thickness is (a) and (b).
Images displayed by 6.5 in. flexible full-color top-emission AMOLED panel: when the panel is bent to a curvature of approximately 2 cm.
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