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Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors
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10.1063/1.3159832
/content/aip/journal/apl/95/1/10.1063/1.3159832
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3159832
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional structure of bottom gate TFTs on PI/glass after debonding from glass substrate.

Image of FIG. 2.
FIG. 2.

(a) Representative transfer characteristics of TFTs on glass substrate (open symbols) and PI substrate (solid symbols). (b) Threshold voltage shift as a function of stress time for TFTs on glass substrate (open symbols) and PI substrate (solid symbols).

Image of FIG. 3.
FIG. 3.

Evolution TFT of ON current (squares), OFF current (circles) and gate leakage current (triangles) with bending curvature. Left and right panels correspond to inward and outward bending, respectively. Substrate thickness is (a) and (b).

Image of FIG. 4.
FIG. 4.

Images displayed by 6.5 in. flexible full-color top-emission AMOLED panel: when the panel is bent to a curvature of approximately 2 cm.

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/content/aip/journal/apl/95/1/10.1063/1.3159832
2009-07-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3159832
10.1063/1.3159832
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