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Ferroelectric properties of epitaxial thin films on silicon by control of crystal orientation
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10.1063/1.3163057
/content/aip/journal/apl/95/1/10.1063/1.3163057
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3163057
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of PZT/SRO thin films on , with PZT(110) (a) and PZT(001) (c) orientation respectively. -scan profiles of SRO(002) and Si(202) reflections of the PZT(110) (b) and PZT(001) sample (d). Schematic side and top view of the SRO(110) (e) and SRO(001) (f) configuration (dashed) on (solid) and corresponding -scan rocking curves of PZT(110) and PZT(002) peaks.

Image of FIG. 2.
FIG. 2.

hysteresis (a) and loops (b) of PZT(001) and PZT(110) samples at 1 kHz frequency.

Image of FIG. 3.
FIG. 3.

Remnant polarization of PZT(001) and PZT(110) samples versus the number of switching cycles at 200 kV/cm amplitude and 1 kHz frequency (a). hysteresis (b) and loops (c) of PZT(001) and PZT(110) samples after .

Image of FIG. 4.
FIG. 4.

Positive part of the loop of the PZT(110) sample after 1, , , , and switching cycles (a). Leakage current vs electric field characteristics of PZT(001) and PZT(110) samples at initial stage and after switching cycles (b).

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/content/aip/journal/apl/95/1/10.1063/1.3163057
2009-07-07
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ferroelectric properties of epitaxial Pb(Zr,Ti)O3 thin films on silicon by control of crystal orientation
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3163057
10.1063/1.3163057
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