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High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures
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View: Figures


Image of FIG. 1.
FIG. 1.

Preparation steps for the preparation of IHPDM-embedded structure: (a) IHPEPs generated on an undoped GaN, (b) the IHPEPs coated with and photoresist, (c) the dry-etched surface, and (d) LEO of layer on the IHPDM-embedded structure.

Image of FIG. 2.
FIG. 2.

Calculated extraction efficiency of LEDs fabricated on the conventional LEO mask (rectangular thin slabs) and the IHPDM-embedded structure as a function of the refractive index of the embedded material. The inset shows a schematic diagram of the embedded mask used in the calculation. The calculation was performed by using a commercial ray-tracing code (LIGHTTOOLS).

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of (a) a template grown on IHPDM-embedded structure, (b) the propagating dislocations along boundaries of the IHPDMs, and (c) the coalesced region at the upper core region of the mask.

Image of FIG. 4.
FIG. 4.

mapping images of both templates grown on (a) the IHPDM-embedded structure and (b) the reference (planar) GaN.

Image of FIG. 5.
FIG. 5.

(a) Semilogarithmic characteristics and (b) output power-current characteristics of the LEDs fabricated on both IHPDM-embedded template and reference templates.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures