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Preparation steps for the preparation of IHPDM-embedded structure: (a) IHPEPs generated on an undoped GaN, (b) the IHPEPs coated with and photoresist, (c) the dry-etched surface, and (d) LEO of layer on the IHPDM-embedded structure.
Calculated extraction efficiency of LEDs fabricated on the conventional LEO mask (rectangular thin slabs) and the IHPDM-embedded structure as a function of the refractive index of the embedded material. The inset shows a schematic diagram of the embedded mask used in the calculation. The calculation was performed by using a commercial ray-tracing code (LIGHTTOOLS).
Cross-sectional TEM images of (a) a template grown on IHPDM-embedded structure, (b) the propagating dislocations along boundaries of the IHPDMs, and (c) the coalesced region at the upper core region of the mask.
mapping images of both templates grown on (a) the IHPDM-embedded structure and (b) the reference (planar) GaN.
(a) Semilogarithmic characteristics and (b) output power-current characteristics of the LEDs fabricated on both IHPDM-embedded template and reference templates.
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