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Typical dependence of the Hall coefficient of an InN epilayer (s1) vs magnetic field at 4.2 and 300 K. The dashed lines are calculated taking into account the highly conducting inhomogeneities [Eq. (2)].
SEM surface images of two typical samples.
Temperature dependence of resistivity of the samples s1 and s2.
The magnetic-field dependences of resistivity of the samples s1 (a) and s2 (b) at temperatures: 1.6 K (solid line), 2 K (dashed line), 3.24 K (dotted line), 4.2 K (dash-dotted line).
Summary of growth and electrical parameters of InN epilayers.
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