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Abnormal magnetic-field dependence of Hall coefficient in InN epilayers
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10.1063/1.3167823
/content/aip/journal/apl/95/1/10.1063/1.3167823
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3167823

Figures

Image of FIG. 1.
FIG. 1.

Typical dependence of the Hall coefficient of an InN epilayer (s1) vs magnetic field at 4.2 and 300 K. The dashed lines are calculated taking into account the highly conducting inhomogeneities [Eq. (2)].

Image of FIG. 2.
FIG. 2.

SEM surface images of two typical samples.

Image of FIG. 3.
FIG. 3.

Temperature dependence of resistivity of the samples s1 and s2.

Image of FIG. 4.
FIG. 4.

The magnetic-field dependences of resistivity of the samples s1 (a) and s2 (b) at temperatures: 1.6 K (solid line), 2 K (dashed line), 3.24 K (dotted line), 4.2 K (dash-dotted line).

Tables

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Table I.

Summary of growth and electrical parameters of InN epilayers.

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/content/aip/journal/apl/95/1/10.1063/1.3167823
2009-07-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Abnormal magnetic-field dependence of Hall coefficient in InN epilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3167823
10.1063/1.3167823
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