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Electrical characterization of the soft breakdown failure mode in MgO layers
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10.1063/1.3167827
/content/aip/journal/apl/95/1/10.1063/1.3167827
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3167827
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Evolution of the gate leakage current under a constant voltage stress at 8 V. The solid and dashed lines correspond to experimental data and fitting results, respectively.

Image of FIG. 2.
FIG. 2.

Experimental current-voltage characteristics. Symbols and lines correspond to the fresh and SBD characteristics, respectively. Notice the use of log-log axis in order to emphasize the power-law dependence. The maximum voltage stress is 10 V. The inset shows several SBD spots distributed over the device area.

Image of FIG. 3.
FIG. 3.

Relationship between the parameters and in the power-law model. The circles correspond to the region of experimental data given by the equation [8]. The squares correspond to the parameters extracted from the MgO SBD curves. The solid line is given by the equation .

Image of FIG. 4.
FIG. 4.

(a) Effect of the substrate type and (b) effect of the injection polarity, on the SBD current. Open and filled symbols correspond to the fresh and SBD characteristics, respectively.

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/content/aip/journal/apl/95/1/10.1063/1.3167827
2009-07-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of the soft breakdown failure mode in MgO layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3167827
10.1063/1.3167827
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