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Evolution of the gate leakage current under a constant voltage stress at 8 V. The solid and dashed lines correspond to experimental data and fitting results, respectively.
Experimental current-voltage characteristics. Symbols and lines correspond to the fresh and SBD characteristics, respectively. Notice the use of log-log axis in order to emphasize the power-law dependence. The maximum voltage stress is 10 V. The inset shows several SBD spots distributed over the device area.
Relationship between the parameters and in the power-law model. The circles correspond to the region of experimental data given by the equation . The squares correspond to the parameters extracted from the MgO SBD curves. The solid line is given by the equation .
(a) Effect of the substrate type and (b) effect of the injection polarity, on the SBD current. Open and filled symbols correspond to the fresh and SBD characteristics, respectively.
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