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Current conduction of 0.72 nm equivalent-oxide-thickness stacked gate dielectrics
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10.1063/1.3170235
/content/aip/journal/apl/95/1/10.1063/1.3170235
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3170235
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of capacitor. The inset is the TEM micrograph of capacitor.

Image of FIG. 2.
FIG. 2.

characteristics of capacitor from 300 to 500 K. The inset shows plot for breakdown characteristic at room temperature.

Image of FIG. 3.
FIG. 3.

Characteristics of -EOT for and Hf-based high- dielectrics.

Image of FIG. 4.
FIG. 4.

(a) Schottky emission plots in the region of high temperatures and low to medium electric fields under gate injection. (b) Arrhenius plots for Schottky emission at various electric fields. The inset of (b) is the band diagram of the structure.

Image of FIG. 5.
FIG. 5.

(a) P-F emission plots in the region of low temperatures and medium to high electric fields under gate injection. (b) Arrhenius plots for P-F emission at various electric fields. The inset of (b) is the band diagram of the structure.

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/content/aip/journal/apl/95/1/10.1063/1.3170235
2009-07-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3170235
10.1063/1.3170235
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