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Transistorlike behavior in photoconductor based on dye-sensitized solar cell
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10.1063/1.3171926
/content/aip/journal/apl/95/1/10.1063/1.3171926
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3171926
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagrams for the architecture of present device cell consisting of the counter electrode (CE) opposite to the source (s) and drain (d).

Image of FIG. 2.
FIG. 2.

Current density versus bias voltage for the present device in the dark (off state) and under illumination (on state). The inset is the calculated differential conductance.

Image of FIG. 3.
FIG. 3.

Characteristic transport loops for (left axis) and (right axis) for the present device. The inset is a schematic diagram showing the effective dyed- area of on source and on drain, respectively.

Image of FIG. 4.
FIG. 4.

Photoexcited voltage versus bias voltage for the characterization of the difference between and : (a) versus examined during the loop measurement. The rectangle frame notes the part corresponding to . (b) Enlarged rectangle frame of (a) as (left axis) and the partial plot of Fig. 3 as (right axis).

Image of FIG. 5.
FIG. 5.

Schematic diagram for the various potential levels involving the present device cells. The solid lines represent the dominant direction of electron flowing, and the dash lines represent the potential direction of electron movement.

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/content/aip/journal/apl/95/1/10.1063/1.3171926
2009-07-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transistorlike behavior in photoconductor based on dye-sensitized solar cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3171926
10.1063/1.3171926
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