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Multiferroic oxides-based flash memory and spin-field-effect transistor
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10.1063/1.3173203
/content/aip/journal/apl/95/1/10.1063/1.3173203
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3173203
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A schematic of proposed spin-FET device. Two ferromagnetic contacts are magnetized in the -direction. The spiral plane of multiferroic oxide is perpendicular to the device, and the spin helicity is gate-controlled .

Image of FIG. 2.
FIG. 2.

The arrows show the momentum-dependent magnetic fields induced by the effective spin-orbit interaction, . Also shown are the energy dispersions (dotted curve) and (solid curve) with , . The spiral wave vector is .

Image of FIG. 3.
FIG. 3.

A proposal for a flash-memory device. Different memory states are stored as the relative orientations of the ferromagnetic source and drain.

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/content/aip/journal/apl/95/1/10.1063/1.3173203
2009-07-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multiferroic oxides-based flash memory and spin-field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3173203
10.1063/1.3173203
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