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Atomic mechanism of flat-band voltage shifts by and in gate stacks
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10.1063/1.3173814
/content/aip/journal/apl/95/1/10.1063/1.3173814
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3173814
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Atomic bonding for relaxed networks of (a) pure interface, (b) interface with two and one O vacancy, (c) two and one O vacancy, (d) one and one O vacancy, and (e) two and one O interstitial.

Image of FIG. 2.
FIG. 2.

(a) Local density of states for bulk and bulk sites in network of pure interface and La-doped interface, showing the band offset and how it is modified by La doping. (b) Energy per interface of substitutional La at bulk or sites, or at interfacial sites, compared to bulk and . (c) VBOs for substitutional La, at bulk or sites, or interfacial sites.

Image of FIG. 3.
FIG. 3.

(a) Calculated VBO for supercells with interfacial dopants vs experimental flat band voltage shifts . (b) Calculated VBOs vs valence of dopant element. (c) Calculated VBOs vs work function of the dopant element.

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/content/aip/journal/apl/95/1/10.1063/1.3173814
2009-07-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3173814
10.1063/1.3173814
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