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Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure
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10.1063/1.3175720
/content/aip/journal/apl/95/1/10.1063/1.3175720
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3175720
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Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of the planar-type Pt/CuO/Pt device after the forming process, (b) Chemical PEEM image at the same region as the SEM image, and (c) XAS spectra recorded inside (region I) and outside (region II) the bridge structure near the absorption edge.

Image of FIG. 2.
FIG. 2.

Reduced-state map of the Pt/CuO/Pt devices (a) before and (b) after the forming process. (c) XAS spectra of the bridge structure and CuO channel, recorded near the absorption edge before and after the forming process. The spectra labeled (I) and (II) were obtained from regions (I) and (II) in the PEEM images. (d)–(f) Reduced-state maps of various Pt/CuO/Pt structures after the forming process.

Image of FIG. 3.
FIG. 3.

Reduced-state maps of Cu ions obtained in the (a) LRS and (b) HRS during resistance switching in the Pt/CuO/Pt device.

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/content/aip/journal/apl/95/1/10.1063/1.3175720
2009-07-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3175720
10.1063/1.3175720
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