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Dimensional crossover and weak localization in a 90 nm -GaAs thin film
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10.1063/1.3176968
/content/aip/journal/apl/95/1/10.1063/1.3176968
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3176968
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The MR at , 10, 15, 20, 30, and 40 K (from bottom to top). Inset: A schematic of the layer structure. (b) Temperature dependence of the elastic mean free path. The solid line shows the effective layer thickness. (c) exhibiting logarithmic behavior (solid line) below the crossover temperature .

Image of FIG. 2.
FIG. 2.

The magnetoconductivity for (◻), 10 K (○), 15 K (△), 20 K (▽), 30 K (◇), 40 K , and 50 K . Solid lines show the fits to Eq. (2). Inset: vs showing the characteristic WL peak at low field.

Image of FIG. 3.
FIG. 3.

The temperature dependence of obtained from the fitting of Eq. (2). The solid line is a least-squares power law fit. The dot-dashed and dashed lines are the theoretical predictions based on Nyquist dephasing in 2D and 3D, respectively (Ref. 21), and the dotted line is .

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/content/aip/journal/apl/95/1/10.1063/1.3176968
2009-07-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dimensional crossover and weak localization in a 90 nm n-GaAs thin film
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/1/10.1063/1.3176968
10.1063/1.3176968
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