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Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films
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10.1063/1.3216586
/content/aip/journal/apl/95/10/10.1063/1.3216586
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3216586
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Surface nanomachining process flow for piezoelectric AlN NEMS. (a) Definition of mesa, followed by a dry etch (b) to remove top Mo and AlN. (c) Au electrodes are patterned and deposited adjacent to the mesa region, along with an bridge protecting part of bottom Mo, while the remaining bottom Mo was removed. (d) is stripped and contact is made to the top Mo electrode (including deposition of a bridge layer). (e) NEMS devices are defined, using as a dry etch mask for both NEMS and all metallic contacts. (f) Anisotropic etching of all the structural layers down to Si by using ICP-RIE is followed by an isotropic etch for device release, and subsequent removal of mask. The dashed arrows and lightly hatched areas indicate that the bottom AlN/Mo layers are connected out of the present section plane.

Image of FIG. 2.
FIG. 2.

Characterization of high frequency AlN cantilever NEMS. (a) Illustration of piezoelectric actuation. (b) An SEM image displaying the four-layer composite structure of a cantilever NEMS. (c) Simplified schematic of the optical readout scheme (note for the undriven noise measurements, port 1 is disconnected and network analyzer is replaced by a spectrum analyzer; also is applied only during the tuning measurements shown in Fig. 3). (d) A typical resonant response measured from a driven cantilever [device shown in (b)], with and , extracted from the fit to the model of damped driven oscillator. (e) Measured thermomechanical noise spectral density from the 9.11 MHz device, demonstrating the sensitivities in both electrical and mechanical domains.

Image of FIG. 3.
FIG. 3.

VHF AlN beam resonators demonstrating nonlinearity and frequency tuning behavior. (a) The measured 78.2 MHz resonance clearly manifests the Duffing nonlinearity as the excitation is increased. Inset is an SEM image of the device employed. (b) Measured and computed piezoelectric frequency tuning as a function of dc polarization voltage across the sandwiched AlN layer. Insets illustrate the static longitudinal strain distribution (upper right) induced by a 2.5 V dc polarization, and the mode shape (lower left) corresponding to the measured resonance.

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/content/aip/journal/apl/95/10/10.1063/1.3216586
2009-09-09
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3216586
10.1063/1.3216586
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