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Formation and incorporation of molecules in F-implanted preamorphized Si
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View: Figures


Image of FIG. 1.
FIG. 1.

Secondary ion mass spectrometry concentration profiles of B and F impurities after regrowth of preamorphized samples at . The thick line refers to the F profile of a sample with F alone; thin (dashed) line is relative to the F (B) profiles of a coimplanted sample. The difference in the two F profile is mainly due to different F implant conditions.

Image of FIG. 2.
FIG. 2.

XANES spectra. Thick lines are experimental spectra for the pure F sample and the co-implanted sample at . Upper thin lines are simulations of spectra based on theoretical clusters. is simulated in both symmetric (sym) and asymmetric (asym) structures (Ref. 8). The lower thin line is a simulation based on the molecule structure.

Image of FIG. 3.
FIG. 3.

Thin lines are the experimental EXAFS spectra for the the pure F sample and the coimplanted sample. Solid lines are first coordination shell fit of the data with F–Si distance in agreement with the Si–F distance in the molecule. The dashed line is a simulation with (typical distance in clusters), which clearly is unable to reproduce the spectra.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si