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The complete poly-Si solar cell structure with ZnO:Al as front contact is shown.
Cross-sectional TEM micrographs of partially crystallized Si on SiN (a) and ZnO:Al [(b)–(d)]. The SiN/Si interface on (a) and ZnO:Al/Si interfaces on [(b)–(d)] are located at the top of the image and the Si surface is on the bottom. Before TEM specimen preparation the samples were annealed at for 3.5 h (a) and for 45 min [(b)–(d)]. The bright areas on the images correspond to the crystalline phase of Si, whereas the darker regions correspond to the amorphous matrix.
The temperature dependence of the crystal growth velocity of Si on SiN-coated and ZnO:Al-coated glass is depicted. In accordance to the Arrhenius law the slope of the fitted data represents the activation energy for growth . denotes the intercept of the linear fit.
The temperature dependence of the steady state nucleation rate is illustrated. The nucleation rate of Si on ZnO:Al is significantly higher than the one on SiN. The activation barrier for the steady state nucleation rate also deviates, with Si on ZnO:Al showing a very low barrier. denotes the intercept of the linear fit.
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