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Crystallization kinetics in electron-beam evaporated amorphous silicon on ZnO:Al-coated glass for thin film solar cells
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10.1063/1.3222917
/content/aip/journal/apl/95/10/10.1063/1.3222917
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3222917
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The complete poly-Si solar cell structure with ZnO:Al as front contact is shown.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM micrographs of partially crystallized Si on SiN (a) and ZnO:Al [(b)–(d)]. The SiN/Si interface on (a) and ZnO:Al/Si interfaces on [(b)–(d)] are located at the top of the image and the Si surface is on the bottom. Before TEM specimen preparation the samples were annealed at for 3.5 h (a) and for 45 min [(b)–(d)]. The bright areas on the images correspond to the crystalline phase of Si, whereas the darker regions correspond to the amorphous matrix.

Image of FIG. 3.
FIG. 3.

The temperature dependence of the crystal growth velocity of Si on SiN-coated and ZnO:Al-coated glass is depicted. In accordance to the Arrhenius law the slope of the fitted data represents the activation energy for growth . denotes the intercept of the linear fit.

Image of FIG. 4.
FIG. 4.

The temperature dependence of the steady state nucleation rate is illustrated. The nucleation rate of Si on ZnO:Al is significantly higher than the one on SiN. The activation barrier for the steady state nucleation rate also deviates, with Si on ZnO:Al showing a very low barrier. denotes the intercept of the linear fit.

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/content/aip/journal/apl/95/10/10.1063/1.3222917
2009-09-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystallization kinetics in electron-beam evaporated amorphous silicon on ZnO:Al-coated glass for thin film solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3222917
10.1063/1.3222917
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