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Top: TEM bright field image of arsenic-implanted ZnO before annealing. Bottom: The electron band gap profiles were measured with monochromated EELS, on an arsenic-implanted specimen without subsequent annealing (blue squares), on a specimen with 2 min annealing at (red circles), and on a specimen with 2 min annealing at (green triangles) in ambient air. The inset shows resonant Raman spectra from undoped ZnO and arsenic-implanted ZnO (without annealing).
STEM annular dark field (ADF) image of the multilayer with projected cadmium (black) and band gap (red) profiles. The ZnO substrate is indicated at the right, the specimen surface is on the left-hand side, marked by the bright platinum band from FIB specimen preparation.
Low-loss EELS spectra taken from the central 1.5 nm of an quantum well (pink) and from the GaN spacers between the quantum wells (light blue), compared with bulk (red) and GaN reference spectra (dark blue). The spectrum inset shows a closeup of the band gap features. The lower part of the figure shows a STEM ADF image, taken with the same probe settings as the adjacent EELS maps, which image the band gap energy (binned twice) and the bulk plasmon energy of the four quantum wells.
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