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Ordering of pentacene in organic thin film transistors induced by irradiation of infrared light
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FIG. 1.

(a) Output characteristics of the pentacene OTFTs and the 90 min infrared irradiated pentacene OTFTs. Both pentacene OTFTs are fabricated on surfaces. The pentacene treated with a midinfrared tube of 2500–25 000 nm in wavelength at 50 W is labeled infrared irradiated pentacene. (b) Transfer characteristics of the pentacene OTFTs and the infrared irradiated pentacene OTFTs. The square root of drain current vs gate voltage curves are plotted on the right -axis for the respective samples.

Image of FIG. 2.

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FIG. 2.

Field effect mobility of infrared irradiated pentacene OTFTs as a function of irradiation time. The values of are extracted from the saturation region of the transfer characteristics of infrared irradiated pentacene OTFTs in Fig. 1. The error bar of represents the deviation of device performances of OTFTs.

Image of FIG. 3.

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FIG. 3.

Quantitative change of the peak intensity for (001) peak of pentacene film at different infrared irradiation time. Inset shows Ratio of the (001) peak intensity of infrared irradiated pentacene relative to that of the as-deposited pentacene at different infrared irradiation time. The FWHM of the (001) peak is plotted as a function of infrared irradiation time on the right -axis.

Image of FIG. 4.

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FIG. 4.

Curve fit of the (001) peak of pentacene film treated with different infrared irradiation time. The peak areas of crystal I and crystal II are plotted as a function of infrared irradiation time in the inserted figure.

Image of FIG. 5.

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FIG. 5.

Schematic diagrams showing the crystallization of misoriented pentacene and the pentacene crystal reorientation at different infrared irradiation times. The -axis orientations of crystal I and crystal II differ by an angle of that is marked in the figure.

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/content/aip/journal/apl/95/10/10.1063/1.3222979
2009-09-08
2014-04-20

Abstract

The device performances of pentacene-based organic thin film transistors (OTFTs) were greatly improved by irradiation of infrared light. The field effectmobility and maximum drain current increase from to and to , respectively. The (001) peak of the pentacene “thin film” phase increases in intensity by 4.5 times after infrared irradiation at 50 W for 2 h. Two types of crystal orientations, i.e., “crystal I” and “crystal II” , coexist in the pentacene. The improvement of the characteristics of OTFTs is attributed to crystallization and crystal reorientation induced by infrared light.

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Scitation: Ordering of pentacene in organic thin film transistors induced by irradiation of infrared light
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3222979
10.1063/1.3222979
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