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Amorphous carbon and carbon nitride bottom gate thin film transistors
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10.1063/1.3224834
/content/aip/journal/apl/95/10/10.1063/1.3224834
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3224834
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Interdigitated structure on the designed mask and (b) the schematic diagram of bottom gate and the electrodes for three terminal devices.

Image of FIG. 2.
FIG. 2.

(a) dependence of at , (b) the output characteristics and (c) transfer characteristics of TFT.

Image of FIG. 3.
FIG. 3.

(a) dependence of at , (b) the output characteristics and (c) the transfer characteristics of TFT.

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/content/aip/journal/apl/95/10/10.1063/1.3224834
2009-09-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Amorphous carbon and carbon nitride bottom gate thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3224834
10.1063/1.3224834
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