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Tunable in situ growth of porous cubic silicon carbide thin films via methyltrichlorosilane-based chemical vapor deposition
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10.1063/1.3224895
/content/aip/journal/apl/95/10/10.1063/1.3224895
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3224895
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of SiC films deposited at various growth temperatures. The left vertical dotted line corresponds to the standard TO phonon at . The right vertical dashed line corresponds to the longitudinal optical phonon at . A representative XRD spectrum of the porous films grown at with flow rate ratio of 100 is shown in the inset.

Image of FIG. 2.
FIG. 2.

SEM images of porous film deposited at (a) 875 and (b) at with flow rate ratio of 100. The circle highlights a pinhole while the square shows a pit. Scale bar: . Cross sectional SEM images of porous film deposited at and . The images clearly show the presence of (c) pinhole and (d) pit (the dotted line identifies original Si substrate surface). Scale bar: 500 nm.

Image of FIG. 3.
FIG. 3.

The evolution of pore size and pore areal density of SiC films with deposition temperatures, , and growth time of 30 min.

Image of FIG. 4.
FIG. 4.

Proposed formation mechanism for SiC porous film. (a) Flow of hydrogen gas in the reactor during the heating up stage and formation of etch pits due to etching. (b) Formation of SiC nuclei and a large amount of HCl byproduct gas upon MTS introduction to the reactor. (c) HCl gas further etches away Si substrate (the dotted line identifies original Si substrate surface) and makes the SiC nuclei grow along the voids to form pinholes and pits.

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/content/aip/journal/apl/95/10/10.1063/1.3224895
2009-09-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunable in situ growth of porous cubic silicon carbide thin films via methyltrichlorosilane-based chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3224895
10.1063/1.3224895
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