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Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots
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10.1063/1.3224897
/content/aip/journal/apl/95/10/10.1063/1.3224897
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3224897
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Figures

Image of FIG. 1.
FIG. 1.

(a) Typical AFM image of the conventional GaN grown using the two-step method, and (b) typical AFM image of the GaN on the HT AlN buffer.

Image of FIG. 2.
FIG. 2.

(a) AFM images of InGaN QDs on GaN grown using our HT AlN buffer with a dot density of and (b) on a conventional GaN layer with a dot density of .

Image of FIG. 3.
FIG. 3.

Low temperature PL spectra measured at 4.2 K and carrier lifetime as a function of emission energy for both samples measured at 4.2 and 100 K, respectively.

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/content/aip/journal/apl/95/10/10.1063/1.3224897
2009-09-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3224897
10.1063/1.3224897
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