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Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors
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10.1063/1.3225555
/content/aip/journal/apl/95/10/10.1063/1.3225555
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3225555
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic, (b) optical image of an TFT spin-coated onto a /glass substrate, (c) x-ray diffraction patterns of sol-gel-derived films annealed at , and (d) cross-sectional TEM image and electron diffraction pattern of film annealed at .

Image of FIG. 2.
FIG. 2.

Transfer characteristics and extracted electrical parameters of the fabricated TFTs as a function of precursor composition: the influence of indium without the addition of gallium (a) transfer curve and the variations of (c) mobility and threshold voltage, and (e) on/off current; the influence of gallium when , (b) transfer curve and the variations of (d) mobility and threshold voltage, and (f) on/off current.

Image of FIG. 3.
FIG. 3.

Ternary diagram showing the compositional dependences on the electrical properties of TFTs. Saturation mobility (the value outside the parentheses in the figure), threshold voltage (the value inside the parentheses in the figure), and on/off current ratio (scaled by a color code) are shown as a function of chemical composition.

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/content/aip/journal/apl/95/10/10.1063/1.3225555
2009-09-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3225555
10.1063/1.3225555
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