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Energy resolved spin dependent tunneling in 1.2 nm dielectrics
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View: Figures


Image of FIG. 1.
FIG. 1.

vs . The peak in the curve is caused by a trap assisted tunneling current in the stressed measurement (not shown).

Image of FIG. 2.
FIG. 2.

Representative SDT measurement taken with biased to correspond to the peak in the curve of Fig. 1. The measurement was taken with the magnetic field parallel to the Si/dielectric interface normal. The zero crossing .

Image of FIG. 3.
FIG. 3.

Comparison between the normalized SDT intensities as a function of (a) and the spin dependent modification to the tunneling current as a function of (b). The SDT response of (a) very closely follows the characteristic trap assisted tunneling peak of Fig. 1. Note that the of (b) peaks at about 0.5 V indicating the peak at 0.35 V in the SDT of (a) is shifted downward because direct tunneling overwhelms the trap assisted tunneling process at higher voltages.

Image of FIG. 4.
FIG. 4.

(a) The SDT response as a function of interface , (b) a crude representation of center density of states, and (c) a cartoon representation of the charge states of the centers.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy resolved spin dependent tunneling in 1.2 nm dielectrics