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Self-pulsing 1050 nm quantum dot edge emitting laser diodes
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10.1063/1.3227654
/content/aip/journal/apl/95/10/10.1063/1.3227654
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3227654
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of a multisection device, each section has a length of and is electrically isolated from other sections, which can therefore be driven individually either by forward or reverse bias.

Image of FIG. 2.
FIG. 2.

Schematic of the material. The material contains five repeat layers within the active region. Each layer consists of 7 ML of InGaAs QDs capped with 70 Å GaAs. These are sandwiched by barrier.

Image of FIG. 3.
FIG. 3.

Single facet power output vs current data when the device with all sections under forward bias (dashed line) and when the device is operated with absorber grounded (solid line).

Image of FIG. 4.
FIG. 4.

Lasing spectra when the device with all sections under forward biased current of 50 mA (dashed line) and when the device is operated with absorber grounded and gain section 150 mA (self-pulsing, solid line).

Image of FIG. 5.
FIG. 5.

Streak camera image. Light observed in a 5 ns window (0 corresponds to 500 ns into pulse) when (a) the device is operated with all sections under forward bias. (b) The device is operated with absorber grounded (self-pulsing).

Image of FIG. 6.
FIG. 6.

(a) Streak camera image of light observed in a 10 ns window (first 10 ns of the light pulse). (b) The normalized spectra of the first pulse.

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/content/aip/journal/apl/95/10/10.1063/1.3227654
2009-09-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-pulsing 1050 nm quantum dot edge emitting laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/10/10.1063/1.3227654
10.1063/1.3227654
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