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Schematic of a multisection device, each section has a length of and is electrically isolated from other sections, which can therefore be driven individually either by forward or reverse bias.
Schematic of the material. The material contains five repeat layers within the active region. Each layer consists of 7 ML of InGaAs QDs capped with 70 Å GaAs. These are sandwiched by barrier.
Single facet power output vs current data when the device with all sections under forward bias (dashed line) and when the device is operated with absorber grounded (solid line).
Lasing spectra when the device with all sections under forward biased current of 50 mA (dashed line) and when the device is operated with absorber grounded and gain section 150 mA (self-pulsing, solid line).
Streak camera image. Light observed in a 5 ns window (0 corresponds to 500 ns into pulse) when (a) the device is operated with all sections under forward bias. (b) The device is operated with absorber grounded (self-pulsing).
(a) Streak camera image of light observed in a 10 ns window (first 10 ns of the light pulse). (b) The normalized spectra of the first pulse.
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