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Metal-insulator-metal capacitor with high capacitance density and low leakage current using film
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10.1063/1.3222895
/content/aip/journal/apl/95/11/10.1063/1.3222895
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3222895
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD spectra for film with and without annealing.

Image of FIG. 2.
FIG. 2.

XPS analysis for with different crystallinity. (a) Zr and (b) Ti spectra.

Image of FIG. 3.
FIG. 3.

characteristics for different process conditions. The inset is the delta as a function of voltage for amorphous and orthorhombic with different thicknesses where is the zero-biased capacitance and delta C is defined as the difference between C (v) and .

Image of FIG. 4.
FIG. 4.

Leakage current density-voltage characteristic for different process conditions. The inset is the measured and simulated for the capacitor with 15 nm amorphous where and are current density and electric field (V/cm), respectively.

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/content/aip/journal/apl/95/11/10.1063/1.3222895
2009-09-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3222895
10.1063/1.3222895
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