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XRD spectra for film with and without annealing.
XPS analysis for with different crystallinity. (a) Zr and (b) Ti spectra.
characteristics for different process conditions. The inset is the delta as a function of voltage for amorphous and orthorhombic with different thicknesses where is the zero-biased capacitance and delta C is defined as the difference between C (v) and .
Leakage current density-voltage characteristic for different process conditions. The inset is the measured and simulated for the capacitor with 15 nm amorphous where and are current density and electric field (V/cm), respectively.
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