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Erbium-doped GaN optical amplifiers operating at
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic layer structure of fabricated strip Er-doped GaN waveguide amplifier, which utilizes GaN: Er as optical gain medium with as top and bottom cladding layers, (b) atomic force microscopy image of fabricated devices. The inset shows the optical microscopy image of waveguide facets prepared by mechanical polishing.

Image of FIG. 2.
FIG. 2.

PL spectra of Er-doped GaN waveguide amplifier taken from the end facet of the waveguide when the other end is illuminated by a 371 nm nitride laser. emission was generated at the laser excitation spot within the core of the waveguide and guided to the end facet of the waveguide. The inset shows the optical loss measurement setup.

Image of FIG. 3.
FIG. 3.

Plot of peak intensity as a function of laser excitation spot distance, . The slope of the plot gives the optical loss, which is about .

Image of FIG. 4.
FIG. 4.

(a) Spectra of the transmitted signal emerged from the exit end of the Er-doped GaN waveguide measured under the excitation by a 365 nm high power nitride LED operating at different forward currents. The intensity of the 1.54 signal guided through the waveguide increases with an increase of the forward current applied to the 365 nm LED, demonstrating a relative signal gain at . (b) Schematic of the optical amplification property measurement setup.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erbium-doped GaN optical amplifiers operating at 1.54 μm