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Controlled growth of InGaAs/InGaAsP quantum dots on InP substrates employing diblock copolymer lithography
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10.1063/1.3224916
/content/aip/journal/apl/95/11/10.1063/1.3224916
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3224916
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Top view SEM image of QDs after selective MOCVD growth.

Image of FIG. 2.
FIG. 2.

LT (30 K) PL spectrum of QD samples with various thicknesses layers.

Image of FIG. 3.
FIG. 3.

Variable temperature PL spectra of an (2 nm each) QD sample demonstrating RT PL near 1600 nm.

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/content/aip/journal/apl/95/11/10.1063/1.3224916
2009-09-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled growth of InGaAs/InGaAsP quantum dots on InP substrates employing diblock copolymer lithography
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3224916
10.1063/1.3224916
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