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Normalized PL spectra of -etched wafers in the temperature ranges (a) 5.9–29 K and (b) 200–310 K. The inset shows the energies, as a function of temperature, of the direct and indirect interband transitions, as well as a defect-assisted transition.
Relative intensities of the direct gap, indirect gap, and defect-assisted PL of -etched wafers as a function of laser pump intensity at 295 K. The inset shows the normalized PL spectra across the same range of laser pump intensities.
Spectroscopy ellipsometric analysis of -etched wafers at 295 K showing: (a) the derived , data in the spectral range 0.5–4.0 eV; (b) the test of for direct transitions; and (c) the test of for indirect transitions.
Time-resolved PL decay measurements of -etched wafers at 295 K, showing double-exponential decay behavior.
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