1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photoluminescence-based measurements of the energy gap and diffusion length of
Rent:
Rent this article for
USD
10.1063/1.3225151
/content/aip/journal/apl/95/11/10.1063/1.3225151
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3225151
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized PL spectra of -etched wafers in the temperature ranges (a) 5.9–29 K and (b) 200–310 K. The inset shows the energies, as a function of temperature, of the direct and indirect interband transitions, as well as a defect-assisted transition.

Image of FIG. 2.
FIG. 2.

Relative intensities of the direct gap, indirect gap, and defect-assisted PL of -etched wafers as a function of laser pump intensity at 295 K. The inset shows the normalized PL spectra across the same range of laser pump intensities.

Image of FIG. 3.
FIG. 3.

Spectroscopy ellipsometric analysis of -etched wafers at 295 K showing: (a) the derived , data in the spectral range 0.5–4.0 eV; (b) the test of for direct transitions; and (c) the test of for indirect transitions.

Image of FIG. 4.
FIG. 4.

Time-resolved PL decay measurements of -etched wafers at 295 K, showing double-exponential decay behavior.

Loading

Article metrics loading...

/content/aip/journal/apl/95/11/10.1063/1.3225151
2009-09-14
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence-based measurements of the energy gap and diffusion length of Zn3P2
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3225151
10.1063/1.3225151
SEARCH_EXPAND_ITEM