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(a) AFM image of nanoswitches and the experimental setup of PCM. (b). Current-voltage curves showing reversible bipolar nonvolatile resistive switching. Other intermediate conductance states can be achieved by tuning the bias voltages. The arrows indicate switching directions. The blue curve highlights the 100th switching loop. Inset: structure of the nanoswitches with 30 nm Pt/ 50 nm .
PCM image of a device (a) in the virgin state , and (b) after switching “ON” . Applied force is . Dashed lines and gray squares outline the junction locations and electrode pads, respectively.
[(a) and (b)] Device schematics without and with force modulation, respectively. (c) Relative conductance change of the switching center vs at 4 different conductance states. Lines are least-squares linear fits.
(a) vs for the four different switch states of the Fig. 3 device. Inset: same plot with the vertical axis on a log scale. (b) Device resistance in log scale as a function of the estimated tunneling gap.
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