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Force modulation of tunnel gaps in metal oxide memristive nanoswitches
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10.1063/1.3227651
/content/aip/journal/apl/95/11/10.1063/1.3227651
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3227651
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of nanoswitches and the experimental setup of PCM. (b). Current-voltage curves showing reversible bipolar nonvolatile resistive switching. Other intermediate conductance states can be achieved by tuning the bias voltages. The arrows indicate switching directions. The blue curve highlights the 100th switching loop. Inset: structure of the nanoswitches with 30 nm Pt/ 50 nm .

Image of FIG. 2.
FIG. 2.

PCM image of a device (a) in the virgin state , and (b) after switching “ON” . Applied force is . Dashed lines and gray squares outline the junction locations and electrode pads, respectively.

Image of FIG. 3.
FIG. 3.

[(a) and (b)] Device schematics without and with force modulation, respectively. (c) Relative conductance change of the switching center vs at 4 different conductance states. Lines are least-squares linear fits.

Image of FIG. 4.
FIG. 4.

(a) vs for the four different switch states of the Fig. 3 device. Inset: same plot with the vertical axis on a log scale. (b) Device resistance in log scale as a function of the estimated tunneling gap.

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/content/aip/journal/apl/95/11/10.1063/1.3227651
2009-09-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Force modulation of tunnel gaps in metal oxide memristive nanoswitches
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/11/10.1063/1.3227651
10.1063/1.3227651
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