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Thermal stability of epitaxial Fe films on GaN(0001)
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View: Figures


Image of FIG. 1.
FIG. 1.

AFM micrographs of (a) the as-grown LT sample and samples annealed at (b) , (c) , and (d) , respectively.

Image of FIG. 2.
FIG. 2.

(a) Symmetric x-ray scans of selected samples from the LT structure. The peak labeled with a star is the reflection. (b) scans of the and Fe{211} planes.

Image of FIG. 3.
FIG. 3.

(a) In-plane crystal orientation map (with a 10° tolerance) and (b) inverse pole figure map obtained by EBSD for an Fe/GaN structure grown at HT. Black lines indicate grains boundaries.

Image of FIG. 4.
FIG. 4.

Hysteresis loops obtained at 300 K for selected samples from the LT structure. The inset magnifies the low magnetic field range.

Image of FIG. 5.
FIG. 5.

Dependence of (a) rms roughness, (b) FWHM of Fe{211} reflection, and (c) of the LT samples on RTA temperature. is the growth temperature of the as-grown sample. The solid lines are guides to the eyes. The vertical dashed line indicates the temperature limit for keeping connected Fe films with high . Filled symbols indicate results for the HT sample for comparison.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal stability of epitaxial Fe films on GaN(0001)